DATASHEET
SIR67-21C/TR8
Electro-Optical Characteristics (Ta=25 ℃ )
Parameter
Radiant Intensity
Peak Wavelength
Spectral Bandwidth
Forward Voltage
Reverse Current
View Angle
Symbol
Ie
λ p
Δλ
V F
I R
2θ1/2
Min.
0.5
---
--
--
--
--
--
--
Typ.
1.1
4.5
875
80
1.3
1.4
--
120
Max.
---
---
--
--
1.6
1.8
10
--
Unit
mW /sr
nm
nm
V
μ A
deg
Condition
I F =20mA
I F =100mA
Pulse Width ≦ 100 μ s ,Duty ≦ 1%
I F =100mA
I F =100mA
I F =20mA
I F =100mA
Pulse Width ≦ 100 μ s ,Duty ≦ 1%
V R =5V
I F =20mA
Revision Copyright ?
Release Date:2013-06-03 15:22:49.0
3 :1
LifecyclePhase:
2010, Everlight All Rights Reserved. Release Date : MAY.20.2013. Issue No: DIR-0000957 www.everlight.com
Expired Period: Forever
相关PDF资料
SIR698DP-T1-GE3 MOSFET N-CHAN 100V(D-S)POWERPAK
SIR800DP-T1-GE3 MOSFET N-CH 20V 8-SOIC
SIR802DP-T1-GE3 MOSFET N-CH D-S 20V 8-SOIC
SIR826DP-T1-GE3 MOSFET N-CH 80V 60A POWERPAK
SIR844DP-T1-GE3 MOSFET N-CH D-S 25V 8-SOIC
SIR846ADP-T1-GE3 MOSFET N-CH 100V 60A SO8
SIR850DP-T1-GE3 MOSFET N-CH 25V 30A PPAK 8SOIC
SIR862DP-T1-GE3 MOSFET N-CH 25V 8-SOIC
相关代理商/技术参数
SIR67-21C-TR8 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Top Infrared LED
SIR688DP-T1-GE3 制造商:Vishay Semiconductors 功能描述:N-CH POWERPAK SO-8 BWL SPLIT GATE 60V 3.5MOHM@10V - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 60V 60A 8-SO 制造商:Vishay Intertechnologies 功能描述:N-Ch PowerPAK SO-8 BWL split gate 60V 3.5mohm@10V
SIR698DP-T1-GE3 功能描述:MOSFET 100V 7.5A 23W 195mOhm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR770DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
SIR770DP-T1-GE3 功能描述:MOSFET 30V 8A/8A DUAL N-CH MOSFET w/Shottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR774DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET with Schottky Diode
SiR774DP-T1-GE3 功能描述:MOSFET 30 Volts 40 Amps 62.5 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR788DP-T1-GE3 功能描述:MOSFET 30V 60A 48W 3.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube